CDM22010-650 mosfet equivalent, silicon n-channel power mosfet.
* High voltage capability (VDS=650V)
* Low gate charge (Qgs=8.0nC)
* Low rDS(ON) (0.88Ω)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS
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such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with l.
The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage c.
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